Atomistic model structure of the Ge(100)-GeO2 interface

被引：13

作者：

Broqvist, Peter ^{[1
]}

Binder, Jan Felix

Pasquarello, Alfredo

机构：

[1] Ecole Polytech Fed Lausanne, Inst Theoret Phys, CH-1015 Lausanne, Switzerland

来源：

MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 7-9期

关键词：

Germanium; GeO2; Interface;

D O I：

10.1016/j.mee.2009.03.087

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An atomistic model of the Ge-GeO2 interface has been generated through first-principle methods based on density functional theory. The interface model consists of amorphous GeO2 connected to crystalline Ge through a substoichiometric oxide region showing regular structural parameters. Structural and electronic properties are compared to available experimental data and studied as they evolve across the Ge-GeO2 interface. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1589 / 1591

页数：3

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