Electron transport in disordered semiconductors studied by a small harmonic modulation of the steady state

被引:70
作者
Vanmaekelbergh, D [1 ]
de Jongh, PE [1 ]
机构
[1] Univ Utrecht, Debye Inst, NL-3508 TA Utrecht, Netherlands
来源
PHYSICAL REVIEW B | 2000年 / 61卷 / 07期
关键词
D O I
10.1103/PhysRevB.61.4699
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Semiconducting or insulating networks form a class of disordered systems in which electron motion can be attenuated by scattering effects (structural disorder) and multiple trapping (electronic disorder). We studied the electron transport characteristics of such a disordered system under steady-state constraints by introducing a small excess of free carriers, harmonically varying in time. Propagation of this small excess through the system is considered taking into account scattering and temporary localization. Finally, the harmonic photocurrent response upon light modulation is considered. Two different transport regimes could be distinguished. In the first regime transport appears to be regular and is characterized by a single transit time for all elections. However, the transit time may be determined by multiple trapping. Scattering and multiple trapping can be distinguished by variation of the steady-state constraints. The second (irregular) regime shows a strong dispersion in the transit time, similar to dispersive transport observed under nonsteady-state conditions.
引用
收藏
页码:4699 / 4704
页数:6
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