Electroluminescence from Au/Si nitride film Si with the film prepared by electron cyclotron resonance method

被引：18

作者：

Li, AP

Zhang, LD

Zhang, YX

Qin, GG

Wang, X

Hu, XW

机构：

[1] BEIJING UNIV,DEPT PHYS,BEIJING 100871,PEOPLES R CHINA

[2] ACAD SINICA,INT CTR MAT PHYS,SHENYANG 110015,PEOPLES R CHINA

[3] NATL CTR OPTOELECT TECHNOL,BEIJING 100083,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 01期

关键词：

D O I：

10.1063/1.118115

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We use only nitrogen as the reaction gas to deposit on the cleaned Si wafer an extra-thin Si nitride film (similar to 40 Angstrom) by electron cyclotron resonance method. Electroluminescence (EL) with its peak wavelength at about 7000 Angstrom from the semitransparent Au/extra-thin Si nitride film/p-Si structure has been detected. The effects of forward bias and annealing on the EL have been studied. (C) 1996 American Institute of Physics.

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页码：4 / 6

页数：3

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