Ostwald ripening and flattening of epitaxial ZnO layers during in situ annealing in metalorganic vapor phase epitaxy

被引:40
作者
Krost, A [1 ]
Christen, J [1 ]
Oleynik, N [1 ]
Dadgar, A [1 ]
Deiter, S [1 ]
Bläsing, J [1 ]
Krtschil, A [1 ]
Forster, D [1 ]
Bertram, F [1 ]
Diez, A [1 ]
机构
[1] Univ Magdeburg, FNW IEP, D-39016 Magdeburg, Germany
关键词
D O I
10.1063/1.1785871
中图分类号
O59 [应用物理学];
学科分类号
摘要
ZnO films were grown at 450degreesC by metalorganic vapor phase epitaxy on GaN/Si(111) substrate and subsequently annealed in situ at 900degreesC for times ranging from 0 to 8 min. The epitaxial layers were characterized by atomic force microscopy, x-ray diffraction, and cathodoluminescence measurements. The as-grown ZnO layers consist of three-dimensional nanoscale-sized clusters of [0001]-oriented monocrystallites. During the first 1 min of annealing, a surface smoothening due to a redistribution of material is observed leading to a decrease of both the island numbers and their heights. After 2 min of annealing, the surface morphology has completely changed and is transformed into a nearly two-dimensional cluster-free surface. This phase transition is accompanied by a strong improvement of the crystalline and optical properties. The effect is attributed to Ostwald ripening with a subsequent flattening of the crystal surface. (C) 2004 American Institute of Physics.
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收藏
页码:1496 / 1498
页数:3
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