Ostwald ripening and flattening of epitaxial ZnO layers during in situ annealing in metalorganic vapor phase epitaxy

被引：40

作者：

Krost, A ^{[1
]}

Christen, J ^{[1
]}

Oleynik, N ^{[1
]}

Dadgar, A ^{[1
]}

Deiter, S ^{[1
]}

Bläsing, J ^{[1
]}

Krtschil, A ^{[1
]}

Forster, D ^{[1
]}

Bertram, F ^{[1
]}

Diez, A ^{[1
]}

机构：

[1] Univ Magdeburg, FNW IEP, D-39016 Magdeburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 09期

关键词：

D O I：

10.1063/1.1785871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO films were grown at 450degreesC by metalorganic vapor phase epitaxy on GaN/Si(111) substrate and subsequently annealed in situ at 900degreesC for times ranging from 0 to 8 min. The epitaxial layers were characterized by atomic force microscopy, x-ray diffraction, and cathodoluminescence measurements. The as-grown ZnO layers consist of three-dimensional nanoscale-sized clusters of [0001]-oriented monocrystallites. During the first 1 min of annealing, a surface smoothening due to a redistribution of material is observed leading to a decrease of both the island numbers and their heights. After 2 min of annealing, the surface morphology has completely changed and is transformed into a nearly two-dimensional cluster-free surface. This phase transition is accompanied by a strong improvement of the crystalline and optical properties. The effect is attributed to Ostwald ripening with a subsequent flattening of the crystal surface. (C) 2004 American Institute of Physics.

引用

页码：1496 / 1498

页数：3

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