Correlation of stress and atomic-scale surface roughness evolution during intermittent homoepitaxial growth of (111)-oriented Ag and Cu

被引：48

作者：

Friesen, C ^{[1
]}

Thompson, CV ^{[1
]}

机构：

[1] MIT, Dept Mat Engn, Cambridge, MA 02139 USA

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 93卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.93.056104

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Stress evolution during intermittent homoepitaxial growth of (111)-oriented Cu and Ag thin films has been studied. A tensile stress change is observed when growth is stopped, but the change is reversed when growth is resumed. Reflection high energy electron diffraction analysis of the atomic scale surface roughness during intermittent growth demonstrates a strong correlation between the surface structure and reversible stress evolution. The results are discussed in terms of an evolving surface defect population.

引用

页码：056104 / 1

页数：4

共 17 条

[1] Origin of compressive residual stress in polycrystalline thin films [J].