Coherent spin dynamics and spin polarized transport in doped semiconductors

被引:4
作者
Awschalom, DD [1 ]
Samarth, N
机构
[1] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA
[2] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
来源
JOURNAL OF SUPERCONDUCTIVITY | 2000年 / 13卷 / 02期
关键词
spin dynamics; spin transport; doped semiconductors; coherence;
D O I
10.1023/A:1007795815476
中图分类号
O59 [应用物理学];
学科分类号
摘要
We provide an overview of measurements that elucidate the effects of interactions, quantum confinement, reduced dimensionality, and interfacial geometries on coherent electronic spin dynamics and spin transport in doped semiconductors. The experiments focus on a variety of doped semiconductor systems, ranging from bulk n-GaAs crystals to modulation doped II-VI magnetic semiconductor quantum wells. In particular, the latter provide model systems in which electron gases are strongly exchange-coupled to an engineered distribution of magnetic moments, hence allowing one to systematically tailor spin interactions between confined electronic states, magnetic ions, and nuclei. Two complementary techniques including state-of-the-art spin dynamical probes having high temporal (similar to 100 fs) and spatial (similar to 100 nm) resolution, and low-temperature magneto-transport, are used to survey a variety of physical phenomena in these systems.
引用
收藏
页码:201 / 208
页数:8
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