Effect of external stress on creation of buried SiO2 layer in silicon implanted with oxygen

被引：15

作者：

Misiuk, A

Barcz, A

Ratajczak, J

Lopez, M

Romano-Rodriguez, A

Bak-Misiuk, J

Surma, HB

Jun, J

Antonova, IV

Popov, VP

机构：

[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

[2] Univ Barcelona, E-08028 Barcelona, Spain

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[4] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

[5] Polish Acad Sci, High Pressure Res Ctr, PL-01142 Warsaw, Poland

[6] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 73卷 / 1-3期

关键词：

silicon oxygen; implantation; hydrostatic pressure; strain; dislocation;

D O I：

10.1016/S0921-5107(99)00450-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of external stress exerted by enhanced (up to 1.5 GPa) hydrostatic pressure (PIP) of argon ambient during annealing of oxygen-implanted silicon (oxygen dose less than or equal to x 10(17) cm(-2)) up to 1470 K on oxygen agglomeration has been investigated by secondary ion mass spectrometry, transmission electron microscopy, and X-ray and photoluminescence methods, tip treatment results in oxygen distribution shift and massive creation of oxygen precipitates, whereas creation of dislocations is strongly suppressed. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：134 / 138

页数：5

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