DIFFUSION-LIMITED OXYGEN PRECIPITATION IN SILICON - PRECIPITATE GROWTH-KINETICS AND PHASE-FORMATION

被引：78

作者：

VANHELLEMONT, J

机构：

[1] IMEC, B-3001 Leuven

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 06期

关键词：

D O I：

10.1063/1.359832

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Published experimental data on silicon oxide precipitate growth kinetics are interpreted in the framework of the theory of Ham for diffusion Limited precipitation. A growth law for plate-like, octahedral and spherical precipitates is derived showing a size dependence which varies as the square root of time. Using well accepted data for the solubility and the diffusion constant of oxygen in silicon, the calculations suggest that the precipitated phase is closer to SiO than to SiO2. (C) 1995 American Institute of Physics.

引用

页码：4297 / 4299

页数：3

共 15 条

[1] INFRARED STUDY OF OXYGEN PRECIPITATE COMPOSITION IN SILICON [J].

BORGHESI, A ;

PIAGGI, A ;

SASSELLA, A ;

STELLA, A ;

PIVAC, B .

PHYSICAL REVIEW B, 1992, 46 (07) :4123-4127

[2] RADIALLY SYMMETRIC PHASE GROWTH CONTROLLED BY DIFFUSION [J].

FRANK, FC .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1950, 201 (1067) :586-599

[3] OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON [J].

GOSELE, U ;

TAN, TY .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (02) :79-92

[4] THEORY OF DIFFUSION-LIMITED PRECIPITATION [J].

HAM, FS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (04) :335-351

[5] INFLUENCE OF THE FIRST THERMAL CYCLES OF AN IC PROCESS ON OXYGEN PRECIPITATION IN CZ SILICON-WAFERS - A DETAILED ANALYSIS [J].

JOLY, JP ;

ROBERT, V .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (01) :105-111

[6] AN INFRARED AND NEUTRON-SCATTERING ANALYSIS OF THE PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON [J].

LIVINGSTON, FM ;

MESSOLORAS, S ;

NEWMAN, RC ;

PIKE, BC ;

STEWART, RJ ;

BINNS, MJ ;

BROWN, WP ;

WILKES, JG .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (34) :6253-6276

[7]

LYNCH CT, 1984, CRC HDB MAT SCI, V3, P140

[8]

Mikkelsen J C, 1985, MATER RES SOC S P, V59, P19

[9] INTERLABORATORY DETERMINATION OF OXYGEN IN SILICON FOR CERTIFIED REFERENCE MATERIALS [J].

MURRAY, R ;

GRAFF, K ;

PAJOT, B ;

STRIJCKMANS, K ;

VANDENDRIESSCHE, S ;

GRIEPINK, B ;

MARCHANDISE, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (12) :3582-3587

[10]

SKIFF WM, 1986, MATER RES SOC S P, V59, P241

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