AN INFRARED AND NEUTRON-SCATTERING ANALYSIS OF THE PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON

被引：116

作者：

LIVINGSTON, FM ^{[1
]}

MESSOLORAS, S ^{[1
]}

NEWMAN, RC ^{[1
]}

PIKE, BC ^{[1
]}

STEWART, RJ ^{[1
]}

BINNS, MJ ^{[1
]}

BROWN, WP ^{[1
]}

WILKES, JG ^{[1
]}

机构：

[1] MULLARD LTD,MAT DEV LAB,SOUTHAMPTON SO9 7BH,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 34期

关键词：

D O I：

10.1088/0022-3719/17/34/025

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：6253 / 6276

页数：24

共 44 条

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[2] EFFECT OF CARBON ON THERMAL DONOR FORMATION IN HEAT-TREATED PULLED SILICON CRYSTALS
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NEWMAN, RC
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (02) : 255 - &
[3] THE OXYGEN RELATED DONOR EFFECT IN SILICON
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STAVOLA, M
[J]. PHYSICA B & C, 1983, 116 (1-3): : 271 - 275
[4] DIFFUSION LIMITED PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON
BINNS, MJ
BROWN, WP
WILKES, JG
NEWMAN, RC
LIVINGSTON, FM
MESSOLORAS, S
STEWART, RJ
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (06) : 525 - 527
[5] ABSORPTION OF OXYGEN IN SILICON IN NEAR AND FAR INFRARED
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HAYES, W
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[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1970, 317 (1528) : 133 - +
[6] EARLY STAGES OF OXYGEN SEGREGATION AND PRECIPITATION IN SILICON
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THIBAULTDESSEAUX, J
SEIDMAN, DN
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 825 - 836
[7] KINETICS OF MIGRATION OF POINT DEFECTS TO DISLOCATIONS
BULLOUGH, R
NEWMAN, RC
[J]. REPORTS ON PROGRESS IN PHYSICS, 1970, 33 (02) : 101 - &
[8] EFFECTS OF HEAT-TREATMENT ON DISLOCATION-FREE OXYGEN-CONTAINING SILICON-CRYSTALS
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JONES, AW
WALLHOUSE, EJ
WILKES, JG
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) : 1646 - 1655
[9] IMPACT OF HIGH-TEMPERATURE PROCESSING ON BULK DEFECTS IN CZOCHRALSKI SILICON
CLAEYS, C
BENDER, H
DECLERCK, G
VANLANDUYT, J
VANOVERSTRAETEN, R
AMELINCKX, S
[J]. PHYSICA B & C, 1983, 116 (1-3): : 148 - 161
[10] CRAVEN RA, 1981, SEMICONDUCTOR SILICO, P254

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