IMPACT OF HIGH-TEMPERATURE PROCESSING ON BULK DEFECTS IN CZOCHRALSKI SILICON

被引：7

作者：

CLAEYS, C ^{[1
]}

BENDER, H ^{[1
]}

DECLERCK, G ^{[1
]}

VANLANDUYT, J ^{[1
]}

VANOVERSTRAETEN, R ^{[1
]}

AMELINCKX, S ^{[1
]}

机构：

[1] UNIV ANTWERPEN,RUCA,B-2020 ANTWERPEN,BELGIUM

来源：

PHYSICA B & C | 1983年 / 116卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(83)90242-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：148 / 161

页数：14

共 54 条

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[2]

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[3]

BENDER H, 1982, UNPUB P INT SCH DEFE

[4]

BENDER H, 1981, I PHYS C SER, V60, P313

[5]

BENSON KE, 1981, SEMICONDUCTOR SILICO, P33

[6]

Burgess R.R., 1973, SEMICONDUCTOR SILICO, P363

[7]

CLAEYS C, 1981, SEMICONDUCTOR SILICO, P730

[8] INFLUENCE OF ANNEALING AMBIENT ON THE SHRINKAGE KINETICS OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON [J].

CLAEYS, CL ;

DECLERCK, GJ ;

VANOVERSTRAETEN, RJ .

APPLIED PHYSICS LETTERS, 1979, 35 (10) :797-799

[9] THE INHIBITION EFFECT OF A TRICHLOROETHANE OXIDATION TO SUPPRESS THE STACKING-FAULT NUCLEATION IN SILICON [J].

CLAEYS, CL ;

DECLERCK, GJ ;

VANOVERSTRAETEN, RJ .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6183-6188

[10]

CLAEYS CL, 1977, SEMICONDUCTOR CHARAC, P366

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