INFLUENCE OF ANNEALING AMBIENT ON THE SHRINKAGE KINETICS OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON

被引：21

作者：

CLAEYS, CL

DECLERCK, GJ

VANOVERSTRAETEN, RJ

机构：

[1] K. U. Leuven, E.S.A.T. Laboratory, B-3030 Heverlee

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 10期

关键词：

D O I：

10.1063/1.90940

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The shrinkage behavior of oxidation-induced stacking faults (OSF's) during an annealing in nitrogen, argon, and hydrogen is studied as a function of both annealing temperature and time. Independent of the used gas atmosphere, the OSF shrinkage rate is characterized by an activation energy of 4.9 eV. To explain the different experimental results, an interstitial model for the stacking fault shrinkage is proposed.

引用

页码：797 / 799

页数：3

共 25 条

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