CORRELATION BETWEEN THE DIFFUSION OF BORONS ATOMS AND THE GROWTH KINETICS OF OXIDATION-INDUCED STACKING-FAULTS

被引：8

作者：

CLAEYS, CL

DECLERCK, GJ

VANOVERSTRAETEN, RJ

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1978年 / 13卷 / 12期

关键词：

D O I：

10.1051/rphysap:019780013012079700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：797 / 801

页数：5

共 30 条

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[8]

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[9] ANNIHILATION OF STACKING-FAULTS IN SILICON BY IMPURITY DIFFUSION [J].

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[10] SECONDARY DEFECT GENERATION SUPPRESSION IN HEAVILY BORON IMPLANTED SILICON WAFERS BY HCL OXIDATION [J].

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