ANNIHILATION OF STACKING-FAULTS IN SILICON BY IMPURITY DIFFUSION

被引：33

作者：

HASHIMOTO, H ^{[1
]}

SHIBAYAMA, H ^{[1
]}

MASAKI, H ^{[1
]}

ISHIKAWA, H ^{[1
]}

机构：

[1] FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 12期

关键词：

D O I：

10.1149/1.2132720

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1899 / 1902

页数：4

共 24 条

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