ANNIHILATION OF STACKING-FAULTS IN SILICON BY IMPURITY DIFFUSION

被引：33

作者：

HASHIMOTO, H ^{[1
]}

SHIBAYAMA, H ^{[1
]}

MASAKI, H ^{[1
]}

ISHIKAWA, H ^{[1
]}

机构：

[1] FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 12期

关键词：

D O I：

10.1149/1.2132720

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1899 / 1902

页数：4

共 24 条

[11] IONIZATION INTERACTION BETWEEN IMPURITIES IN SEMICONDUCTORS AND INSULATORS [J].

LONGINI, RL ;

GREENE, RF .

PHYSICAL REVIEW, 1956, 102 (04) :992-999

[12] GROWTH OF LATTICE DEFECTS IN SILICON DURING OXIDATION [J].

QUEISSER, HJ ;

VANLOON, PGG .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) :3066-&

[13] SLIP PATTERNS ON BORON-DOPED SILICON SURFACES [J].

QUEISSER, HJ .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) :1776-&

[14] ELECTRICALLY ACTIVE STACKING FAULTS IN SILICON. [J].

Ravi, K.V. ;

Varker, C.J. ;

Volk, C.E. .

Journal of the Electrochemical Society, 1973, 120 (04) :533-541

[15]

RAVI KV, 1974, PHILOS MAG, V30, P1081, DOI 10.1080/14786437408207260

[16] ELIMINATION OF OXIDATION-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS .1. PHOSPHORUS DIFFUSION-INDUCED MISFIT DISLOCATIONS [J].

ROZGONYI, GA ;

PETROFF, PM ;

READ, MH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) :1725-1729

[17] EFFECTS OF ATMOSPHERE DURING ARSENIC DIFFUSION IN SILICON FROM DOPEDOXIDE [J].

SAKURAI, T ;

NISHI, H ;

FURUYA, T ;

HASHIMOTO, H ;

SHIBAYAMA, H .

APPLIED PHYSICS LETTERS, 1973, 22 (05) :219-220

[18] OXIDATION, DEFECTS AND VACANCY DIFFUSION IN SILICON [J].

SANDERS, IR ;

DOBSON, PS .

PHILOSOPHICAL MAGAZINE, 1969, 20 (167) :881-&

[19] STACKING-FAULT GENERATION SUPPRESSION AND GROWN-IN DEFECT ELIMINATION IN DISLOCATION FREE SILICON WAFERS BY HCL OXIDATION [J].

SHIRAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (01) :1-10

[20] SOLUBILITY OF FLAWS IN HEAVILY-DOPED SEMICONDUCTORS [J].

SHOCKLEY, W ;

MOLL, JL .

PHYSICAL REVIEW, 1960, 119 (05) :1480-1482

← 1 2 3 →