EXPLANATION OF ANOMALOUS BASE REGIONS IN TRANSISTORS

被引:7
作者
FAIR, RB [1 ]
机构
[1] BELL TEL LABS INC,READING,PA 19603
关键词
D O I
10.1063/1.1654604
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:186 / 187
页数:2
相关论文
共 3 条
[1]   QUANTITATIVE THEORY OF RETARDED BASE DIFFUSION IN SILICON N-P-N STRUCTURES WITH ARSENIC EMITTERS [J].
FAIR, RB .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :283-291
[2]   INTERACTIONS IN SEQUENTIAL DIFFUSION PROCESSES IN SEMICONDUCTORS [J].
HU, SM ;
SCHMIDT, S .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) :4272-+
[3]   DISCOVERY OF ANOMALOUS BASE REGIONS IN TRANSISTORS [J].
ZIEGLER, JF ;
BAGLIN, JEE ;
COLE, GW .
APPLIED PHYSICS LETTERS, 1972, 21 (04) :177-&