Development of channel waveguide lasers in Nd3+-doped chalcogenide (Ga:La:S) glass through photoinduced material modification

被引：44

作者：

Mairaj, AK ^{[1
]}

Riziotis, C ^{[1
]}

Chardon, AM ^{[1
]}

Smith, PGR ^{[1
]}

Shepherd, DP ^{[1
]}

Hewak, DW ^{[1
]}

机构：

[1] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 20期

关键词：

D O I：

10.1063/1.1520698

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the development of a waveguide laser source in a neodymium-doped chalcogenide (Ga:La:S) glass. Channel waveguide structures were directly written via above band gap (lambda=244 nm) illumination provided by a focused UV-laser beam with fluencies 1.5-150 J/cm(2). Effects of photoinduced material modification in the form of surface compaction and photodensification were evident. Characterization revealed a low threshold waveguide laser with emission at 1075 nm and slope efficiency of 17%. The active device was spatially single mode and exhibited laser operation with 8.6 mW peak power and attenuation <0.5 dB cm(-1). (C) 2002 American Institute of Physics.

引用

页码：3708 / 3710

页数：3

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