Single-atomic-layered quantum wells built in wide-gap semiconductors LnCuOCh (Ln=lanthanide, Ch=chalcogen) -: art. no. 155305

被引:102
作者
Ueda, K
Hiramatsu, H
Ohta, H
Hirano, M
Kamiya, T
Hosono, H
机构
[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[2] Japan Sci & Technol Agcy, ERATO, Hosono Transparent Electroact Mat Project, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan
关键词
D O I
10.1103/PhysRevB.69.155305
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
LnCuOCh (Ln=lanthanide, Ch=chalcogen) layered oxychalcogenides are wide-gap p-type semiconductors composed of alternately stacked (Ln(2)O(2))(2+) oxide layers and (Cu(2)Ch(2))(2-) chalcogenide layers. Energy band calculations revealed that Cu-Ch hybridized bands only spread in the (Cu(2)Ch(2))(2-) layers, which suggests that hole carriers in these bands are confined by the potential barriers formed by the (Ln(2)O(2))(2+) layers. Stepwise absorption spectra of a series of LnCuOCh experimentally verified that an exciton in the (Cu(2)Ch(2))(2-) layers shows a two-dimensional behavior. These theoretical and experimental results indicate that LnCuOCh has "natural multiple quantum wells" built into its layered structure.
引用
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页码:155305 / 1
页数:4
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