Intrinsic excitonic photoluminescence and band-gap engineering of wide-gap p-type oxychalcogenide epitaxial films of LnCuOCh (Ln=La, Pr, and Nd; Ch=S or Se) semiconductor alloys

被引：73

作者：

Hiramatsu, H

Ueda, K

Takafuji, K

Ohta, H

Hirano, M

Kamiya, T

Hosono, H

机构：

[1] Japan Sci & Technol Agcy, ERATO, Hosono Transparent Electroact Mat Project, Kawasaki, Kanagawa 2130012, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 09期

关键词：

D O I：

10.1063/1.1618932

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical spectroscopic properties of layered oxychalcogenide semiconductors LnCuOCh (Ln=La, Pr, and Nd; Ch=S or Se) on epitaxial films were thoroughly investigated near the fundamental energy band edges. Free exciton emissions were observed for all the films between 300 and similar to30 K. In addition, a sharp emission line, which was attributed to bound excitons, appeared below similar to80 K. The free exciton energy showed a nonmonotonic relationship with lattice constant and was dependent on lanthanide and chalcogen ion substitutions. These results imply that the exciton was confined to the (Cu(2)Ch(2))(2-) layer. Anionic and cationic substitutions tune the emission energy at 300 K from 3.21 to 2.89 eV and provide a way to engineer the electronic structure in light-emitting devices. (C) 2003 American Institute of Physics.

引用

页码：5805 / 5808

页数：4

共 37 条

[1] Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters
Akasaki, I
Amano, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (9A): : 5393 - 5408
[2] Charkin DO, 1999, RUSS J INORG CHEM+, V44, P833
[3] Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization
Chen, YF
Bagnall, DM
Koh, HJ
Park, KT
Hiraga, K
Zhu, ZQ
Yao, T
[J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) : 3912 - 3918
[4] Preparation and characterization of CuAlxGa1-xSe2 alloy layers grown by low-pressure metalorganic vapor phase epitaxy
Chichibu, S
Nakanishi, H
Shirakata, S
Isomura, S
Harada, Y
Matsumoto, S
Higuchi, H
Kariya, T
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (06) : 3338 - 3345
[5] Green to ultraviolet photoluminescence from CuAlxGa1-xS2 chalcopyrite semiconductor heteroepitaxial alloys grown by low-pressure metalorganic vapor phase epitaxy
Harada, Y
Nakanishi, H
Chichibu, SF
[J]. JOURNAL OF CRYSTAL GROWTH, 2001, 226 (04) : 473 - 480
[6] Hiramatsu H, 2003, MATER RES SOC SYMP P, V747, P359
[7] Degenerate p-type conductivity in wide-gap LaCuOS1-xSex (x=0-1) epitaxial films
Hiramatsu, H
Ueda, K
Ohta, H
Hirano, M
Kamiya, T
Hosono, H
[J]. APPLIED PHYSICS LETTERS, 2003, 82 (07) : 1048 - 1050
[8] Preparation of transparent p-type (La1-xSrxO)CuS thin films by r.f. sputtering technique
Hiramatsu, H
Ueda, K
Ohta, H
Orita, M
Hirano, M
Hosono, H
[J]. THIN SOLID FILMS, 2002, 411 (01) : 125 - 128
[9] Electrical conductivity control in transparent p-type (LaO)CuS thin films prepared by rf sputtering
Hiramatsu, H
Orita, M
Hirano, M
Ueda, K
Hosono, H
[J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (11) : 9177 - 9181
[10] Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS
Hiramatsu, H
Ueda, K
Ohta, H
Orita, M
Hirano, M
Hosono, H
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (04) : 598 - 600

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