Growth paths for the sulfurization of Cu-rich Cu/In thin films

被引：26

作者：

Rodriguez-Alvarez, H. ^{[1
]}

Koetschau, I. M. ^{[2
]}

Genzel, C. ^{[1
]}

Schock, H. W. ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie, D-14109 Berlin, Germany

[2] Centrotherm Photovolta AG, D-89143 Blaubeuren, Germany

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 07期

关键词：

Growth monitoring; Phase transitions; Thin film; Chalcopyrite; Solar cell; X-RAY-DIFFRACTION; IN-SITU; REAL-TIME; PRECURSORS; SELENIZATION; TEMPERATURE; KINETICS; GALLIUM; CUINSE2; MODULES;

D O I：

10.1016/j.tsf.2008.10.091

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In-situ energy-dispersive X-ray diffraction performed at the BESSY and HASY-LAB synchrotron facilities was used to observe sulfur pressure dependent growth paths for the formation of CuInS(2) thin films from Cu-rich metallic precursors. CuInS(2) can form directly from the intermetallic phases, through binary sulfides or via CuIn(5)S(8). Particular attention is given to the latter reaction sequence, typical of rapid thermal processing (RTP), with complementary EDS and SEM analysis. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2140 / 2144

页数：5

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