Efficient photocarrier injection to transition metal oxides

被引：12

作者：

Muraoka, Y ^{[1
]}

Yamauchi, T ^{[1
]}

Muramatsu, T ^{[1
]}

Yamaura, J ^{[1
]}

Hiroi, Z ^{[1
]}

机构：

[1] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2004年 / 272卷

关键词：

photocarrier injection; heterostructure; transition metal oxides; VO2; YBa2Cu3Oz;

D O I：

10.1016/j.jmmm.2003.12.1290

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have fabricated transition metal oxide (TMO) films on n-type titanium oxide substrates, and measured in-plane resistance under ultraviolet light irradiation. A dramatic decrease in the resistance and enhancement of the superconducting critical temperature are observed for VO2/TiO2:Nb and YBa2Cu3O2/SrTiO3:Nb, respectively. Out-of-plane voltage measurements under light irradiation indicate hole-carrier injection from the substrate to the film in both the cases. The present photocarrier injection technique could apply to many TMOs to control the hole carrier density externally. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：448 / 449

页数：2

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