Heat transport in Sb2-xVxTe3 single crystals -: art. no. 125206

被引:36
作者
Dyck, JS [1 ]
Chen, W
Uher, C
Drasar, C
Lost'ák, P
机构
[1] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
[2] Univ Pardubice, Fac Chem Technol, Pardubice 53210, Czech Republic
关键词
D O I
10.1103/PhysRevB.66.125206
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Antimony telluride doped with small concentrations of vanadium was recently identified as a diluted magnetic semiconductor. We present a study of the heat transport in single crystals of Sb2-xVxTe3 with x=0, 0.01, 0.02, and 0.03. Thermopower and thermal conductivity were measured from 1.5 K to 300 K. The thermopower is positive for all samples investigated and has a modest dependence on vanadium content. At low temperatures, the lattice thermal conductivity has an approximate T-2 dependence and the data up to 100 K can be fitted well assuming that phonons scatter on boundaries, point defects, charge carriers, and other phonons. Theoretical analysis reveals that the over-riding effect of vanadium impurity is the formation of point defects that suppress heat transport via both mass and elastic strain fluctuations.
引用
收藏
页码:1252061 / 1252066
页数:6
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