Analysis of light emitting diodes by X-ray reflectivity measurements

被引:16
作者
Christ, T
Geffart, F
Glusen, B
Kettner, A
Lussem, G
Schafer, O
Stumpflen, V
Wendorff, JH
Tsukruk, VV
机构
[1] UNIV MARBURG,DEPT PHYS CHEM,D-35032 MARBURG,GERMANY
[2] UNIV MARBURG,CTR MAT SCI,D-35032 MARBURG,GERMANY
[3] WESTERN MICHIGAN UNIV,COLL ENGN & APPL SCI,KALAMAZOO,MI 49008
关键词
electronic devices; polymers; surface structure; X-ray diffraction;
D O I
10.1016/S0040-6090(96)09542-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
X-ray reflectivity investigations were performed on organic light emitting diodes (LEDs) with the purpose of characterizing those properties which control the performance of the devices. These are the thickness of the electrodes and of the active organic films. the roughness of the layers and of the substrate, as well as the internal structure of the organic films. Based on the experimental results and corresponding simulations on multilayer polymer/metal structures, it has become obvious that X-ray reflectometry constitutes anon-destructive technique for characterizing light emitting diodes with a complex multilayer architecture. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:214 / 222
页数:9
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