Thickness dependence of Pb(Zr0.52Ti0.48)O3 films prepared by pulsed laser deposition

被引：11

作者：

Kim, MC ^{[1
]}

Choi, JW

Yoon, SJ

Yoon, KH

Kim, HJ

机构：

[1] Korea Inst Sci & Technol, Thin Film Technol Res Ctr, Seoul 130650, South Korea

[2] Yonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 6A期

关键词：

Pb(Zr0.52Ti0.48)O-3; pulsed laser deposition; single process; preferred orientation; microstructure; dielectric properties;

D O I：

10.1143/JJAP.41.3817

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The films of nominal composition Pb(Zr0.52Ti0.48)O-3 (PZT) in the thickness range of 0.4-6.0 mum were fabricated on Pt/Ti/SiO2/Si substrate using a pulsed laser deposition (PLD). The PZT films were deposited in a single process at 500degreesC and post annealed at 650degreesC in oxygen atmosphere. The variations in preferred orientation and microstructure were determined as a function of film thickness. The transition of preferred orientation and microstructure influenced dielectric property. Ferroelectric and dielectric properties were maximized at the film thickness of 2.0 mum. The maximum values of remnant polarization and dielectric constant were 38 mummuC/cm(2) and 1380, respectively.

引用

页码：3817 / 3821

页数：5

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