A novel high-sensitive Pd/InP hydrogen sensor fabricated by electroless plating

被引:102
作者
Chen, HI [1 ]
Chou, YI [1 ]
Chu, CY [1 ]
机构
[1] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan
关键词
hydrogen sensor; electroless plating; Schottky diode; Pd/InP;
D O I
10.1016/S0925-4005(02)00044-8
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
In this work, a novel electroless plating technique was proposed to fabricate high-sensitive Pd/InP Schottky diode hydrogen sensors. The Schottky current-voltage (I-V characteristics were investigated at hydrogen concentrations in air ranging from 15-10,000 ppm. Experimental results show that the Schottky diode characteristics for the sensor devices obtained by electroless plating are superior to those obtained by the conventional thermal evaporation. Furthermore, due to the low-energy fabrication, the Fermi-level pinning effect can be avoided and therefore, the sensor device exhibits high sensitivity on hydrogen. Even at very low hydrogen concentration of 15 ppm, the saturation sensitivity reaches about 2.07. Further analyzing the I-V data, it shows that the experimental results are in a good agreement with the proposed hydrogen adsorption model. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:10 / 18
页数:9
相关论文
共 34 条
[1]  
ASPENES DE, 1983, J VAC SCI TECHNOL B, V1, P602
[2]  
CARD HC, 1971, J PHYS D, V4, P1586
[3]  
CHEN HI, 2001, P EL SOC 200 M EL SO, V18, P630
[4]   PREPARATION AND CHARACTERIZATION OF A COMPOSITE PALLADIUM-CERAMIC MEMBRANE [J].
COLLINS, JP ;
WAY, JD .
INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH, 1993, 32 (12) :3006-3013
[5]  
DIAMAND YS, 1997, MICROELECTRON ENG, V33, P47
[6]  
EFTEKHARI G, 1993, PHYS STATUS SOLIDI A, V140, P194
[7]   TRENCH PD/SI METAL-OXIDE-SEMICONDUCTOR SCHOTTKY-BARRIER DIODE FOR A HIGH-SENSITIVITY HYDROGEN GAS SENSOR [J].
FANG, YK ;
HWANG, SB ;
LIN, CY ;
LEE, CC .
APPLIED PHYSICS LETTERS, 1990, 57 (25) :2686-2688
[8]   Kinetic modelling of the H-2-O-2 reaction on Pd and of its influence on the hydrogen response of a hydrogen sensitive Pd metal-oxide-semiconductor device [J].
Fogelberg, J ;
Petersson, LG .
SURFACE SCIENCE, 1996, 350 (1-3) :91-102
[9]   UNIFIED DISORDER INDUCED GAP STATE MODEL FOR INSULATOR-SEMICONDUCTOR AND METAL-SEMICONDUCTOR INTERFACES [J].
HASEGAWA, H ;
OHNO, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1130-1138
[10]   NOVEL IN-SITU ELECTROCHEMICAL TECHNOLOGY FOR FORMATION OF OXIDE-FREE AND DEFECT-FREE SCHOTTKY CONTACT TO GAAS AND RELATED LOW-DIMENSIONAL STRUCTURES [J].
HASHIZUME, T ;
SCHWEEGER, G ;
WU, NJ ;
HASEGAWA, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04) :2660-2666