Model for the influence of boron impurities on the morphology of AIN grown by physical vapor transport

被引：9

作者：

Brenner, DW ^{[1
]}

Schlesser, R ^{[1
]}

Sitar, Z ^{[1
]}

Dalmau, R ^{[1
]}

Collazo, R ^{[1
]}

Li, Y ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

SURFACE SCIENCE | 2004年 / 560卷 / 1-3期

关键词：

nitrides; boron; growth; surface structure; morphology; roughness; and topography;

D O I：

10.1016/j.susc.2004.05.003

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 [物理化学]; 081704 [应用化学];

摘要：

We propose that the reduction of the Schwoebel barrier by trace B impurities is responsible for the relatively flat c-plane morphology observed in AlN crystals that are deposited via physical vapor transport in BN crucibles relative to crystals grown in boron-free conditions. The model is supported by molecular statics calculations that predict that B substitutional impurities are energetically preferred at steps on the (0001) surface, and that these impurities enhance binding and incorporation of growth species onto steps. (C) 2004 Published by Elsevier B.V.

引用

页码：L202 / L206

页数：5