Subgap optical absorption and recombination center efficiency in bulk GaAs irradiated by light or heavy ions

被引：13

作者：

Mangeney, J ^{[1
]}

Lopez, J

Stelmakh, N

Lourtioz, JM

Oudar, JL

Bernas, H

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France

[2] France Telecom, CNET, DTD, CDP, F-92220 Bagneux, France

[3] Univ Paris 11, Ctr Spectroscopie Nucl & Spectroscopie Masse, CNRS, UMR 8609, F-91405 Orsay, France

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 01期

关键词：

D O I：

10.1063/1.125649

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter reports the results of a comparative study on heavy- and light-ion-irradiated semiconductors for fast saturable absorbers. The linear absorption of bulk GaAs irradiated either by Au+ ions or protons was measured over a wide range of wavelengths below the gap. Good correspondence was found between the absorption measurements and the calculated elementary defect concentrations. Defect clustering is evidenced in the heavy-ion case. Pump-probe experiments were used to measure the time-resolved absorption variations for weakly irradiated GaAs samples under intense illumination. Much shorter carrier recombination times are estimated for the heavy-ion case. (C) 2000 American Institute of Physics. [S0003-6951(00)00301-6].

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页码：40 / 42

页数：3

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