Quantum-dot vertical-cavity surface-emitting lasers

被引：36

作者：

Bimberg, D

Ledentsov, NN

Lott, JA

机构：

[1] Solid-State Physics Institute, Technical University of Berlin, Berlin

来源：

MRS BULLETIN | 2002年 / 27卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

chemical vapor deposition (CVD); compound semiconductors; crystal growth; crystal structure; electrical properties; molecular-beam epitaxy (MBE); optoetectronic materials; optical properties; photoluminescence; quantum dots (QDs); transmission electron microscopy (TEM); vertical-cavity surface-emitting lasers (VCSELs);

D O I：

10.1557/mrs2002.172

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaAs-based continuous-wave quantum-dot vertical-cavity surface-emitting lasers (VCSELs) operating at 1.3 mum at 20degreesC with output power of 1.2 mW have been realized. Threshold currents approach 1-1.5 mA for 8-mum oxide apertures. Operating voltages are similar to2 V. Long operation lifetimes in excess of 5000 h at 50degreesC without degradation have been achieved. This article describes these breakthroughs, which are based on our development of complex self-organized growth technologies for defect-free stacked quantum dots.

引用

页码：531 / 537

页数：7

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