Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser

被引：64

作者：

Asryan, LV ^{[1
]}

Grundmann, M

Ledentsov, NN

Stier, O

Suris, RA

Bimberg, D

机构：

[1] SUNY Stony Brook, Stony Brook, NY 11794 USA

[2] Tech Univ Berlin, D-10623 Berlin, Germany

[3] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[4] Univ Leipzig, D-04103 Leipzig, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 03期

关键词：

D O I：

10.1063/1.1383575

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gain and threshold current of a self-assembled InAs/GaAs quantum-dot (QD) laser are simulated. A small overlap integral of the electron and hole wave functions in pyramidal QDs is shown to be a possible reason for the low single-layer modal gain, which limits lasing via the ground-state transition at short (under a millimeter) cavity lengths. (C) 2001 American Institute of Physics.

引用

页码：1666 / 1668

页数：3

共 14 条

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