Electronic structure of (Tl0.125Pb0.875)Te

被引：9

作者：

Hase, I. ^{[1
]}

Yanagisawa, T. ^{[1
]}

机构：

[1] AIST, Nanoelectr Res Ctr, Tsukuba, Ibaraki 3058568, Japan

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2006年 / 445卷

关键词：

PbTe; Tl delta Pb1-delta Te; superconductivity; electronic structure; band structure calculation; negative U;

D O I：

10.1016/j.physc.2006.03.078

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an ab-initio supercell calculation of electronic band structures of (Tl delta Pb1-delta)Te with delta = 0 and 0.125. PbTe is to be a very small gap semiconductor, and Tl doping induces a quasi-impurity band in this in-gap state. A local relaxation based on ionic model is discussed. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：61 / 64

页数：4

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