Formation of a passivating CH3NH3PbI3/PbI2 interface during moderate heating of CH3NH3PbI3 layers

被引：261

作者：

Supasai, T. ^{[1
]}

Rujisamphan, N. ^{[2
]}

Ullrich, K. ^{[3
]}

Chemseddine, A. ^{[3
]}

Dittrich, Th. ^{[3
]}

机构：

[1] Kasetsart Univ, Fac Sci, Dept Mat Sci, Bangkok 10900, Thailand

[2] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA

[3] Helmholtz Ctr Berlin Mat & Energy, D-14109 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 18期

关键词：

PHOTOVOLTAGE;

D O I：

10.1063/1.4826116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Layers of CH3NH3PbI3 are investigated by modulated surface photovoltage spectroscopy (SPV) during heating in vacuum. As prepared CH3NH3PbI3 layers behave as a p-type doped semiconductor in depletion with a band gap of 1.5 eV. After heating to 140 degrees C the sign of the SPV signals of CH3NH3PbI3 changed concomitant with the appearance of a second band gap at 2.36 eV ascribed to PbI2, and SPV signals related to charge separation from defect states were reduced after moderate heating. (c) 2013 AIP Publishing LLC.

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页数：3

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