Novel SiGe island coarsening kinetics: Ostwald ripening and elastic interactions

被引：115

作者：

Floro, JA

Sinclair, MB

Chason, E

Freund, LB

Twesten, RD

Hwang, RQ

Lucadamo, GA

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

[2] Brown Univ, Div Engn, Providence, RI 02912 USA

[3] Univ Illinois, Ctr Microanal Mat, Urbana, IL 61801 USA

[4] Sandia Natl Labs, Livermore, CA 94551 USA

[5] Lehigh Univ, Dept Mat Sci & Engn, Bethlehem, PA 18015 USA

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 84卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.84.701

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Real-time light scattering measurements of coherent island coarsening during SiGe/Si heteroepitaxy reveal unusual kinetics. In particular, the mean island volume increases superlinearly with time, while the areal density of islands decreases at a faster-than-linear rate. Neither observation is consistent with standard considerations of Ostwald ripening. Modification of the standard theory to incorporate the effect of elastic interactions in the growing island array reproduces the observed behavior.

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页码：701 / 704

页数：4

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