Third-harmonic generation in silicon photonic crystals and microcavities

被引：30

作者：

Martemyanov, MG ^{[1
]}

Kim, EM

Dolgova, TV

Fedyanin, AA

Aktsipetrov, OA

Marowsky, G

机构：

[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia

[2] Laser Lab Gottingen, D-37077 Gottingen, Germany

来源：

PHYSICAL REVIEW B | 2004年 / 70卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1103/PhysRevB.70.073311

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Third-harmonic generation (THG) is observed in photonic crystals and microcavities formed from porous silicon. The THG spectra reveal an intensity enhancement at the photonic band gap edge of these photonic crystals and at the resonance of the fundamental radiation with the microcavity mode. The enhancement is related to the combination of the phase matching and fundamental light localization. The amplitudes of the THG peaks are strongly affected by the competition between the porous silicon absorption at the third-harmonic wavelength and the three-photon resonance of cubic susceptibility of silicon achieved in the vicinity of the E-0'/E-1 critical point.

引用

页码：073311 / 1

页数：4

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