Structural and dielectric properties of BaTiO3/SrTiO3 artificial superlattice on MgO and SrTiO3 single crystal substrates

被引：5

作者：

Kim, L ^{[1
]}

Kim, J

Kim, YS

Jung, D

Park, N

Lee, J

机构：

[1] Sungkyunkwan Univ, Dept Phys, Brain Korean Phys Div 21, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Inst Basic Sci, Suwon 440746, South Korea

[3] Sungkyunkwan Univ, Dept Mat Engn, Suwon 440746, South Korea

[4] Kumoh Natl Univ Technol, Div Engn & Mat Sci, Kumi 730701, South Korea

来源：

INTEGRATED FERROELECTRICS | 2002年 / 50卷

关键词：

artificial superlattice; BaTiO3; SrTiO3; lattice distortion; dielectric constant;

D O I：

10.1080/10584580290172251

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

BaTiO3 (BTO)/SrTiO3 (STO) artificial superlattices were deposited by pulsed laser deposition (PLD) on MgO (100) and SrTiO3 (100) single crystal substrates. The stacking periodicity of the superlattice was varied from one unit cell to 125 unit cell thickness. The BTO/STO superlattice has epitaxial layers of BTO and STO with parallel crystallographic orientation to MgO (100) and SrTiO3 (100) substrates. The BTO and STO layers were strained by the lattice mismatch between the BTO and STO layers. The lattice distortion and correspondingly dielectric constant of the BTO/STO superlattice increased with decreasing the stacking periodicity of the superlattice within the critical thickness (similar to20 nm or BTO25/STO25 period). The BTO/STO superlattice with a maximum dielectric constant of 1230 was obtained at a stacking periodicity of BTO2 unit cell/STO2 unit cell, which was possible by the control of lattice distortions of BTO and STO layers in the artificial superlattice.

引用

页码：219 / 228

页数：10

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