Design of 0.1-μm pocket n-MOSFETs for low-voltage applications

Channel length 0.1-mum pocket n-MOSFETs meeting the specifications of sensitivity of off-state current to channel length, off-state (leakage) current, on-state (drive) current and 1 V power-supply voltage are designed using a two-dimensional device simulator, Medici, in order to construct a viable design space locating the well-designed 0.1-mum pocket devices. The 0.1-mum pocket n-MOSFETs located within the viable design space are partitioned into two types of pocket devices on the basis of gate controllability of channel- and depletion-layer charges. The 0.1-mum pocket n-MOSFETs are compared with 0.1-mum conventional bulk n-MOSFETs selected to meet the same specifications and prove to be effective in reducing sensitivity to channel-length variations. (C) 2002 Elsevier Science Ltd. All rights reserved.