Molybdenum thin-film growth on rutile titanium dioxide (110)

被引:10
作者
Blondeau-Patissier, V
Lian, GD
Domenichini, B
Steinbrunn, A
Bourgeois, S
Dickey, EC
机构
[1] Univ Kentucky, Dept Chem & Mat Engn, Lexington, KY 40506 USA
[2] Univ Bourgogne, UMR 5613 CNRS, Lab Rech React Solides, UFR Sci & Tech, F-21078 Dijon, France
基金
美国国家科学基金会;
关键词
electron microscopy; X-ray scattering; diffraction; and reflection; X-ray photoelectron spectroscopy; molybdenum; epitaxy; growth; titanium oxides; ion bombardment;
D O I
10.1016/S0039-6028(02)01383-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Molybdenum films were deposited at room temperature on rutile TiO2(1 1 0) surfaces having different stoichiometries, surface roughnesses and crystallinities. The film structures and compositions and the substrate-film interfaces were investigated by X-ray diffraction. high-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy. Different substrate pretreatments resulted in markedly different film and interface structures. Under the growth conditions studied, no amorphous molybdenum oxide interlayers were formed upon deposition in contrast to previous studies. Preferred (1 1 0) textured Mo films grew on both air-annealed and oxygen-bombarded substrates, While sharp substrate-film interfaces were observed in the air-annealed samples, oxygen bombardment led to a rough interface. Epitaxial growth was achieved on argon-bombarded substrates, and a single crystal TiO interlayer was present as a result of the substrate pretreatment, The orientation relationship among three crystalline layers was: Mo(2 0 0)[0 0 1]//TiO(2 0 0)[0 1 1]//TiO2(1 1 0)[0 0 1]. Even though the growth was epitaxial, the argon bombardment resulted in a rough interface between the substrate and the TiO interlayer and between TiO and the Mo film. The results are compared with previous data on thin Mo film growth (less than or equal to 3 ML) on rutile TiO2(1 1 0), and the structural evolution is discussed. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码:119 / 128
页数:10
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