Wide range control of the sustaining voltage of ESD protection elements realized in a smart power technology

被引：19

作者：

Gossner, H

Müller-Lynch, T

Esmark, K

Stecher, M

机构：

来源：

ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS, 1999 | 1999年

关键词：

D O I：

10.1109/EOSESD.1999.818985

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Highly efficient ESD protection structures with a sustaining voltage > 40 V are realized iri a smart power technology. They guarantee an excellent ESD protection at high voltage pins without the danger of transient latch-up. Compared to the vertical npn transistor a shift of the sustaining voltage of 20 V has been achieved purely by a layout modification of the buried layer. The high ESD performance has been proven on product level by an ESD hardness of > 8 kV (HBM).

引用

页码：19 / 27

页数：9

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