Reductive growth of nanosized ligated metal clusters on silicon nanowires

被引:27
作者
Sun, XH
Li, CP
Wong, NB
Lee, CS
Lee, ST [1 ]
机构
[1] City Univ Hong Kong, COSDAF, Dept Biol & Chem, Hong Kong, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
关键词
D O I
10.1021/ic011219x
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
The reductive growth of metal clusters on silicon nanowires (SiNWs) is reported. The HF-etched SiNWs were found to reduce ligated Au-Ag clusters of single size, shape, composition, and structure. In the process, the surfaces of the SiNWs were reoxidized. The reductive cluster growth on the SiNW surface was followed by high-resolution transmission electron microscopy (HRTEM). The reduced metal clusters grew to different sizes in the nanometer regime (1-7 nm in diameter) on the SiNW surfaces. At sizes greater than approximately 7 nm, they tend to separate from the SiNW surfaces. Further growth and/or agglomeration of these colloidal particles to sizes greater than roughly 25 nm in diameter eventually causes the particles to precipitate from solution. Two interesting phenomena, the "sinking cluster" and the "cluster fusion" processes, were observed under TEM.
引用
收藏
页码:4331 / 4336
页数:6
相关论文
共 34 条
[1]   QUASIMELTING AND PHASES OF SMALL PARTICLES [J].
AJAYAN, PM ;
MARKS, LD .
PHYSICAL REVIEW LETTERS, 1988, 60 (07) :585-587
[2]   EVIDENCE FOR SINKING OF SMALL PARTICLES INTO SUBSTRATES AND IMPLICATIONS FOR HETEROGENEOUS CATALYSIS [J].
AJAYAN, PM ;
MARKS, LD .
NATURE, 1989, 338 (6211) :139-141
[3]   Electron field emission from silicon nanowires [J].
Au, FCK ;
Wong, KW ;
Tang, YH ;
Zhang, YF ;
Bello, I ;
Lee, ST .
APPLIED PHYSICS LETTERS, 1999, 75 (12) :1700-1702
[4]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[5]   Functional nanoscale electronic devices assembled using silicon nanowire building blocks [J].
Cui, Y ;
Lieber, CM .
SCIENCE, 2001, 291 (5505) :851-853
[6]   Doping and electrical transport in silicon nanowires [J].
Cui, Y ;
Duan, XF ;
Hu, JT ;
Lieber, CM .
JOURNAL OF PHYSICAL CHEMISTRY B, 2000, 104 (22) :5213-5216
[7]   The structural and luminescence properties of porous silicon [J].
Cullis, AG ;
Canham, LT ;
Calcott, PDJ .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) :909-965
[8]   Electron beam induced small particle transformations: Temperature [J].
Doraiswamy, N ;
Marks, LD .
SURFACE SCIENCE, 1996, 348 (1-2) :L67-L69
[9]   ELECTRON-MICROSCOPY - COULOMB EXPLOSIONS IN METALS [J].
HOWIE, A .
NATURE, 1986, 320 (6064) :684-684
[10]   STRUCTURAL INSTABILITY OF ULTRAFINE PARTICLES OF METALS [J].
IIJIMA, S ;
ICHIHASHI, T .
PHYSICAL REVIEW LETTERS, 1986, 56 (06) :616-619