Crystal orientation effect on valence-subband structures in wurtzite-GaN strained quantum wells

被引：28

作者：

Ohtoshi, T

Niwa, A

Kuroda, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 12A期

关键词：

wurtzite; GaN; quantum well; crystal orientation; subband structure;

D O I：

10.1143/JJAP.35.L1566

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We analyze theoretically for the first time valence-subband structures in wurtzite-GaN strained quantum wells (QWs) for various crystal orientations. The calculation is based on the Bir-Pikus effective-mass theory, where deformation potentials are determined by a semi-empirical tight-binding method. The obtained results show that the hole effective masses of strained QWs with non-(0001) orientation, in particular, around the (10 (1) over bar 2) orientation, are markedly lighter than those of (0001) cases. We also found that the optical matrix elements of non-(0001) strained QWs are twice as large as those for (0001) strained QWs.

引用

收藏

页码：L1566 / L1568

页数：3

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