Electrical stress effect on poly-Si thin film transistors fabricated by metal induced lateral crystallization

被引：13

作者：

Ihn, TH ^{[1
]}

Lee, BI ^{[1
]}

Joo, SK ^{[1
]}

Jeon, YC ^{[1
]}

机构：

[1] LG SEMICON CO LTD,PROC GRP,ADV TECHNOL LAB,CHEONGJOO 361480,SOUTH KOREA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 08期

关键词：

TFT; poly-Si; MILC; Ni; stress;

D O I：

10.1143/JJAP.36.5029

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical stress effects on polycrystalline silicon thin film transistors (poly-Si TFTs) fabricated by metal induced lateral crystallization at 500 degrees C have been investigated. Leakage current decreased by four orders of magnitude after the electrical stress in both n-channel TFTs and p-channel TFTs. it turned out that the electrical stress between the drain and source mas more effective than that between the gate and source. Polarity of the electrical stress turned out to be also important for depression of the leakage current.

引用

页码：5029 / 5032

页数：4

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