Microscopic carbon distribution in Si1-yCy alloys: A Raman scattering study

被引：15

作者：

MelendezLira, M

Lorentzen, JD

Menendez, J

Windl, W

Cave, NG

Liu, R

Christiansen, JW

Theodore, ND

Candelaria, JJ

机构：

[1] LOS ALAMOS NATL LAB,DIV THEORET,LOS ALAMOS,NM 87545

[2] MOTOROLA INC,MAT RES & STRATEG TECHNOL,MESA,AZ 85202

[3] MOTOROLA INC,SEMICOND TECHNOL LAB,AUSTIN,TX 78721

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.56.3648

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Si1-yCy alloys grown by solid-phase epitaxy of carbon-implanted Si were investigated with Raman spectroscopy A comparison between the experimental Raman spectrum and the spectrum predicted from nb initio calculations shows that the carbon distribution in these samples is more randomized than in similar alloys grown by molecular-beam epitaxy. It is argued that epitaxial, layer-by-layer growth promotes the formation of ordered Si-C structures.

引用

收藏

页码：3648 / 3650

页数：3

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