HIGH-QUALITY SI1-X-YGEXCY EPITAXIAL LAYERS GROWN ON (100) SI BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION USING METHYLSILANE

被引：69

作者：

MI, J ^{[1
]}

WARREN, P ^{[1
]}

LETOUMEAU, P ^{[1
]}

JUDELEWICZ, M ^{[1
]}

GAILHANOU, M ^{[1
]}

DUTOIT, M ^{[1
]}

DUBOIS, C ^{[1
]}

DUPUY, JC ^{[1
]}

机构：

[1] INSA,PHYS MAT LAB,F-69621 VILLEURBANNE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 02期

关键词：

D O I：

10.1063/1.114686

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have produced epitaxial Si1-x-yGexCy/Si heterostructures by rapid thermal chemical vapor deposition using methylsilane (SiCH6). These layers were grown in the SiH4/GeH 4/SiCH6/H2 system between 550 and 600°C at 1.5 Torr. Suitable process conditions were found that allow very efficient substitutional carbon incorporation. No carbon cross contamination was observed. Crystal quality, chemical composition, and lattice strain were deduced from Nomarski microscopy, transmission electron microscopy, Fourier transform infrared spectroscopy, secondary ion mass spectrometry, and x-ray diffraction. Defect-free alloy layers with compositions of up to 20 at.% Ge and 2.2 at. % C were produced. The lattice parameter was tailored so that the strain in these layers gradually moved from compressive to tensile. A tensile strain of up to 0.35% was achieved.© 1995 American Institute of Physics.

引用

页码：259 / 261

页数：3

共 16 条

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