GROWTH OF EPITAXIAL GERMANIUM-SILICON HETEROSTRUCTURES BY CHEMICAL VAPOR-DEPOSITION

Germanium-silicon epitaxial layers are now being applied in a variety of heterojunction devices on silicon substrates. In this paper, I review the growth of these structures by chemical vapor deposition. While a wide variety of growth conditions have been used, there is a general trend toward low temperature processes where surface chemical reactions play a dominant role. The present understanding of the decomposition of various reactants is therefore reviewed, followed by a discussion of the implications for growth kinetics. The introduction of defects during growth will also be discussed. Finally a summary of recent device developments will be given.