CONDITIONS FOR AN OXIDE-FREE SI SURFACE FOR LOW-TEMPERATURE PROCESSING - STEADY-STATE BOUNDARY

被引：21

作者：

AGNELLO, PD

SEDGWICK, TO

机构：

[1] IBM T.J. Watson Research Center, New York 10598, Yorktown Heights

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1992年 / 139卷 / 10期

关键词：

D O I：

10.1149/1.2069009

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The oxidation and removal of surf ace oxides on silicon at low temperatures in an atmospheric-pressure chemical vapor deposition system has been studied. Oxygen concentrations from 5 ppb to 6 ppm and temperatures from 650 to 850-degrees-C were investigated. The oxygen pressure limits to maintaining an oxide-free surface are higher than for vacuum processing due to mass transport of oxygen in the carrier gas.

引用

页码：2929 / 2934

页数：6

共 19 条

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