SIMULATIONS OF TWO-DIMENSIONAL RECIRCULATING FLOW EFFECTS IN HORIZONTAL MOVPE

被引：26

作者：

FIELD, RJ

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 97卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(89)90578-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：739 / 760

页数：22

共 25 条

[1]

Bird R. B., 1960, TRANSPORT PHENOMENA

[2] AN EXPERIMENTAL AND THEORETICAL-STUDY OF GROWTH IN HORIZONTAL EPITAXIAL REACTORS [J].

CHINOY, PB ;

AGNELLO, PD ;

GHANDHI, SK .

JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (06) :493-499

[3]

CHIU KC, 1987, 10TH P INT C CVD, P175

[4]

EVANS GH, 1986, SAND868843 SAND REP

[5] SIMULATION AND GROWTH-RATE UNIFORMITY OF MOVPE INP USING ADDUCTS [J].

FIELD, RJ ;

SCHOLZ, F .

JOURNAL OF CRYSTAL GROWTH, 1988, 88 (03) :371-378

[6] THE GROWTH OF GAAS AT REDUCED PRESSURE IN AN ORGANOMETALLIC CVD SYSTEM [J].

FIELD, RJ ;

GHANDHI, SK .

JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) :581-588

[7]

FIELD RJ, 1985, THESIS RENSSELAER PO

[8] COMPLEX FLOW PHENOMENA IN VERTICAL MOCVD REACTORS - EFFECTS ON DEPOSITION UNIFORMITY AND INTERFACE ABRUPTNESS [J].

FOTIADIS, DI ;

KREMER, AM ;

MCKENNA, DR ;

JENSEN, KF .

JOURNAL OF CRYSTAL GROWTH, 1987, 85 (1-2) :154-164

[9] A RE-EXAMINATION OF BOUNDARY-LAYER THEORY FOR A HORIZONTAL CVD REACTOR [J].

GHANDHI, SK ;

FIELD, RJ .

JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) :619-622

[10] GAS-FLOW PATTERNS IN HORIZONTAL EXPITAXIAL REACTOR CELLS OBSERVED BY INTERFERENCE HOLOGRAPHY [J].

GILING, LJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) :634-644

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