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THE GROWTH OF GAAS AT REDUCED PRESSURE IN AN ORGANOMETALLIC CVD SYSTEM
被引:22
作者
:
FIELD, RJ
论文数:
0
引用数:
0
h-index:
0
FIELD, RJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
机构
:
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1984年
/ 69卷
/ 2-3期
关键词
:
D O I
:
10.1016/0022-0248(84)90369-5
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:581 / 588
页数:8
相关论文
共 25 条
[1]
DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE
BASS, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
SERV ELECTR RES LAB,BALDOCK SG7 6NG,HERTFORDSHIRE,ENGLAND
SERV ELECTR RES LAB,BALDOCK SG7 6NG,HERTFORDSHIRE,ENGLAND
BASS, SJ
[J].
JOURNAL OF CRYSTAL GROWTH,
1975,
31
(DEC)
: 172
-
178
[2]
BASS SJ, 1977, I PHYSICS C SERIES B, V33, P1
[3]
Berkman S., 1978, Heteroepitaxial semiconductors for electronic devices, P264
[4]
BHAT R, 1982 C SOC PHOT INST
[5]
BOYNTON WP, 1929, INT CRIT TABLES, V5, P62
[6]
EFFECTS OF GAS PRESSURE AND VELOCITY ON EPITAXIAL SILICON DEPOSITION BY HYDROGEN REDUCTION OF CHLOROSILANES
BRADSHAW, SE
论文数:
0
引用数:
0
h-index:
0
BRADSHAW, SE
[J].
INTERNATIONAL JOURNAL OF ELECTRONICS,
1967,
23
(04)
: 381
-
&
[7]
CHARACTERIZATION OF FAAS EPITAXIAL LAYERS BY LOW-PRESSURE MOVPE USING TEG AS GA SOURCE
CHANG, CY
论文数:
0
引用数:
0
h-index:
0
CHANG, CY
SU, YK
论文数:
0
引用数:
0
h-index:
0
SU, YK
LEE, MK
论文数:
0
引用数:
0
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0
LEE, MK
CHEN, LG
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0
h-index:
0
CHEN, LG
HOUNG, MP
论文数:
0
引用数:
0
h-index:
0
HOUNG, MP
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 24
-
29
[8]
HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
DAPKUS, PD
MANASEVIT, HM
论文数:
0
引用数:
0
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0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
MANASEVIT, HM
HESS, KL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
HESS, KL
LOW, TS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
LOW, TS
STILLMAN, GE
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引用数:
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0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
STILLMAN, GE
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 10
-
23
[9]
NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS
DUCHEMIN, JP
论文数:
0
引用数:
0
h-index:
0
机构:
Thomson C.S.F., Department Micro électronique Hyperfréquence, Domaine de Corbeville
DUCHEMIN, JP
BONNET, M
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0
引用数:
0
h-index:
0
机构:
Thomson C.S.F., Department Micro électronique Hyperfréquence, Domaine de Corbeville
BONNET, M
KOELSCH, F
论文数:
0
引用数:
0
h-index:
0
机构:
Thomson C.S.F., Department Micro électronique Hyperfréquence, Domaine de Corbeville
KOELSCH, F
HUYGHE, D
论文数:
0
引用数:
0
h-index:
0
机构:
Thomson C.S.F., Department Micro électronique Hyperfréquence, Domaine de Corbeville
HUYGHE, D
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(07)
: 1134
-
1149
[10]
NEW METHOD FOR THE GROWTH OF GAAS EPILAYER AT LOW H-2 PRESSURE
DUCHEMIN, JP
论文数:
0
引用数:
0
h-index:
0
DUCHEMIN, JP
BONNET, M
论文数:
0
引用数:
0
h-index:
0
BONNET, M
KOELSCH, F
论文数:
0
引用数:
0
h-index:
0
KOELSCH, F
HUYGHE, D
论文数:
0
引用数:
0
h-index:
0
HUYGHE, D
[J].
JOURNAL OF CRYSTAL GROWTH,
1978,
45
(01)
: 181
-
186
←
1
2
3
→
共 25 条
[1]
DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE
BASS, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
SERV ELECTR RES LAB,BALDOCK SG7 6NG,HERTFORDSHIRE,ENGLAND
SERV ELECTR RES LAB,BALDOCK SG7 6NG,HERTFORDSHIRE,ENGLAND
BASS, SJ
[J].
JOURNAL OF CRYSTAL GROWTH,
1975,
31
(DEC)
: 172
-
178
[2]
BASS SJ, 1977, I PHYSICS C SERIES B, V33, P1
[3]
Berkman S., 1978, Heteroepitaxial semiconductors for electronic devices, P264
[4]
BHAT R, 1982 C SOC PHOT INST
[5]
BOYNTON WP, 1929, INT CRIT TABLES, V5, P62
[6]
EFFECTS OF GAS PRESSURE AND VELOCITY ON EPITAXIAL SILICON DEPOSITION BY HYDROGEN REDUCTION OF CHLOROSILANES
BRADSHAW, SE
论文数:
0
引用数:
0
h-index:
0
BRADSHAW, SE
[J].
INTERNATIONAL JOURNAL OF ELECTRONICS,
1967,
23
(04)
: 381
-
&
[7]
CHARACTERIZATION OF FAAS EPITAXIAL LAYERS BY LOW-PRESSURE MOVPE USING TEG AS GA SOURCE
CHANG, CY
论文数:
0
引用数:
0
h-index:
0
CHANG, CY
SU, YK
论文数:
0
引用数:
0
h-index:
0
SU, YK
LEE, MK
论文数:
0
引用数:
0
h-index:
0
LEE, MK
CHEN, LG
论文数:
0
引用数:
0
h-index:
0
CHEN, LG
HOUNG, MP
论文数:
0
引用数:
0
h-index:
0
HOUNG, MP
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 24
-
29
[8]
HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
DAPKUS, PD
MANASEVIT, HM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
MANASEVIT, HM
HESS, KL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
HESS, KL
LOW, TS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
LOW, TS
STILLMAN, GE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
STILLMAN, GE
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 10
-
23
[9]
NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS
DUCHEMIN, JP
论文数:
0
引用数:
0
h-index:
0
机构:
Thomson C.S.F., Department Micro électronique Hyperfréquence, Domaine de Corbeville
DUCHEMIN, JP
BONNET, M
论文数:
0
引用数:
0
h-index:
0
机构:
Thomson C.S.F., Department Micro électronique Hyperfréquence, Domaine de Corbeville
BONNET, M
KOELSCH, F
论文数:
0
引用数:
0
h-index:
0
机构:
Thomson C.S.F., Department Micro électronique Hyperfréquence, Domaine de Corbeville
KOELSCH, F
HUYGHE, D
论文数:
0
引用数:
0
h-index:
0
机构:
Thomson C.S.F., Department Micro électronique Hyperfréquence, Domaine de Corbeville
HUYGHE, D
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(07)
: 1134
-
1149
[10]
NEW METHOD FOR THE GROWTH OF GAAS EPILAYER AT LOW H-2 PRESSURE
DUCHEMIN, JP
论文数:
0
引用数:
0
h-index:
0
DUCHEMIN, JP
BONNET, M
论文数:
0
引用数:
0
h-index:
0
BONNET, M
KOELSCH, F
论文数:
0
引用数:
0
h-index:
0
KOELSCH, F
HUYGHE, D
论文数:
0
引用数:
0
h-index:
0
HUYGHE, D
[J].
JOURNAL OF CRYSTAL GROWTH,
1978,
45
(01)
: 181
-
186
←
1
2
3
→