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THE GROWTH OF GAAS AT REDUCED PRESSURE IN AN ORGANOMETALLIC CVD SYSTEM
被引:22
作者
:
FIELD, RJ
论文数:
0
引用数:
0
h-index:
0
FIELD, RJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
机构
:
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1984年
/ 69卷
/ 2-3期
关键词
:
D O I
:
10.1016/0022-0248(84)90369-5
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:581 / 588
页数:8
相关论文
共 25 条
[21]
DEPOSITION OF GAAS EPITAXIAL LAYERS BY ORGANOMETALLIC CVD - TEMPERATURE AND ORIENTATION DEPENDENCE
REEP, DH
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0
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REEP, DH
GHANDHI, SK
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0
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GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(03)
: 675
-
680
[22]
REEP DH, 1982, THESIS RENSSELAER PO
[23]
PLASMA DEPOSITION OF GAAS
SEGUI, Y
论文数:
0
引用数:
0
h-index:
0
SEGUI, Y
CARRERE, F
论文数:
0
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0
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CARRERE, F
BUI, A
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BUI, A
[J].
THIN SOLID FILMS,
1982,
92
(04)
: 303
-
307
[24]
INTERFACE REACTIONS AND GRAIN-GROWTH PROCESSES IN POLY-GAAS DEPOSITED ON MOLYBDENUM SUBSTRATES BY THE ORGANOMETALLIC PROCESS
SHASTRY, SK
论文数:
0
引用数:
0
h-index:
0
SHASTRY, SK
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
[J].
JOURNAL OF CRYSTAL GROWTH,
1983,
61
(03)
: 458
-
462
[25]
SHASTRY SK, 1982, THESIS RENSSELAER PO
←
1
2
3
→
共 25 条
[21]
DEPOSITION OF GAAS EPITAXIAL LAYERS BY ORGANOMETALLIC CVD - TEMPERATURE AND ORIENTATION DEPENDENCE
REEP, DH
论文数:
0
引用数:
0
h-index:
0
REEP, DH
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(03)
: 675
-
680
[22]
REEP DH, 1982, THESIS RENSSELAER PO
[23]
PLASMA DEPOSITION OF GAAS
SEGUI, Y
论文数:
0
引用数:
0
h-index:
0
SEGUI, Y
CARRERE, F
论文数:
0
引用数:
0
h-index:
0
CARRERE, F
BUI, A
论文数:
0
引用数:
0
h-index:
0
BUI, A
[J].
THIN SOLID FILMS,
1982,
92
(04)
: 303
-
307
[24]
INTERFACE REACTIONS AND GRAIN-GROWTH PROCESSES IN POLY-GAAS DEPOSITED ON MOLYBDENUM SUBSTRATES BY THE ORGANOMETALLIC PROCESS
SHASTRY, SK
论文数:
0
引用数:
0
h-index:
0
SHASTRY, SK
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
[J].
JOURNAL OF CRYSTAL GROWTH,
1983,
61
(03)
: 458
-
462
[25]
SHASTRY SK, 1982, THESIS RENSSELAER PO
←
1
2
3
→