AN EXPERIMENTAL AND THEORETICAL-STUDY OF GROWTH IN HORIZONTAL EPITAXIAL REACTORS

被引：15

作者：

CHINOY, PB ^{[1
]}

AGNELLO, PD ^{[1
]}

GHANDHI, SK ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12180

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 06期

关键词：

D O I：

10.1007/BF02652099

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：493 / 499

页数：7

共 18 条

[1] NOVEL REACTOR FOR HIGH VOLUME LOW-COST SILICON EPITAXY
BAN, VS
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 97 - 107
[2] A MATHEMATICAL-MODEL OF THE COUPLED FLUID-MECHANICS AND CHEMICAL-KINETICS IN A CHEMICAL VAPOR-DEPOSITION REACTOR
COLTRIN, ME
KEE, RJ
MILLER, JA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (02) : 425 - 434
[3] A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR
EVERSTEYN, FC
SEVERIN, PJW
BREKEL, CHJV
PEEK, HL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 925 - +
[4] DOPING OF GALLIUM-ARSENIDE IN A LOW-PRESSURE ORGANOMETALLIC CVD SYSTEM .1. SILANE
FIELD, RJ
GHANDHI, SK
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 74 (03) : 543 - 550
[5] THEORETICAL APPROACH UPON THE KINETIC OF GALLIUM-ARSENIDE EPITAXIAL DEPOSITION BY CVD-OM AND COMPARISON WITH EXPERIMENTAL RESULTS
GAVE, G
LEMETAYER, M
BOUREE, JE
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1979, 14 (10): : 875 - 886
[6] A RE-EXAMINATION OF BOUNDARY-LAYER THEORY FOR A HORIZONTAL CVD REACTOR
GHANDHI, SK
FIELD, RJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) : 619 - 622
[7] HE Y, 1987, 10TH P C CVD
[8] CVD IN STAGNATION POINT FLOW - AN EVALUATION OF THE CLASSICAL 1D-TREATMENT
HOUTMAN, C
GRAVES, DB
JENSEN, KF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (05) : 961 - 970
[9] ANALYSIS OF TRANSPORT PROCESSES IN VERTICAL CYLINDER EPITAXY REACTORS
MANKE, CW
DONAGHEY, LF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (04) : 561 - 569
[10] COMPLEX FLOW PHENOMENA IN MOCVD REACTORS .1. HORIZONTAL REACTORS
MOFFAT, H
JENSEN, KF
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 108 - 119

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