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THEORETICAL APPROACH UPON THE KINETIC OF GALLIUM-ARSENIDE EPITAXIAL DEPOSITION BY CVD-OM AND COMPARISON WITH EXPERIMENTAL RESULTS
被引:8
作者
:
GAVE, G
论文数:
0
引用数:
0
h-index:
0
GAVE, G
LEMETAYER, M
论文数:
0
引用数:
0
h-index:
0
LEMETAYER, M
BOUREE, JE
论文数:
0
引用数:
0
h-index:
0
BOUREE, JE
机构
:
来源
:
REVUE DE PHYSIQUE APPLIQUEE
|
1979年
/ 14卷
/ 10期
关键词
:
D O I
:
10.1051/rphysap:019790014010087500
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:875 / 886
页数:12
相关论文
共 25 条
[1]
HILLOCKS ON EPITAXIAL GAAS GROWN FROM TRIMETHYLGALLIUM AND ARSINE
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
[J].
JOURNAL OF CRYSTAL GROWTH,
1974,
26
(02)
: 314
-
316
[2]
HETEROEPITAXIAL INAS GROWN ON GAAS FROM TRIETHYLINDIUM AND ARSINE .1. GROWTH CHARACTERIZATION
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1974,
121
(12)
: 1642
-
1646
[3]
GROWTH AND PROPERTIES OF HETEROEPITAXIAL GALNAS ALLOYS ON GAAS SUBSTRATES USING TRIMETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(05)
: 683
-
687
[4]
CHEMISTRY AND TRANSPORT PHENOMENA OF CHEMICAL VAPOR-DEPOSITION OF SILICON FROM SICL4
BAN, VS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
BAN, VS
GILBERT, SL
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
GILBERT, SL
[J].
JOURNAL OF CRYSTAL GROWTH,
1975,
31
(DEC)
: 284
-
289
[5]
CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .1. DEPOSITION FROM SICL2H2 AND ETCHING BY HCL
BAN, VS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
BAN, VS
GILBERT, SL
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
GILBERT, SL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(10)
: 1382
-
1388
[6]
CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .2. DEPOSITION FROM SICL3H AND SICL4
BAN, VS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
BAN, VS
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(10)
: 1389
-
1391
[7]
MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1)
BAN, VS
论文数:
0
引用数:
0
h-index:
0
BAN, VS
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(09)
: 1473
-
&
[8]
TRANSPORT PHENOMENA MEASUREMENTS IN EPITAXIAL REACTORS
BAN, VS
论文数:
0
引用数:
0
h-index:
0
BAN, VS
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(02)
: 317
-
320
[9]
BAN VS, 4TH INT C VAP GROWTH
[10]
BAN VS, 1976, OCT M EL SOC LAS VEG
←
1
2
3
→
共 25 条
[1]
HILLOCKS ON EPITAXIAL GAAS GROWN FROM TRIMETHYLGALLIUM AND ARSINE
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
[J].
JOURNAL OF CRYSTAL GROWTH,
1974,
26
(02)
: 314
-
316
[2]
HETEROEPITAXIAL INAS GROWN ON GAAS FROM TRIETHYLINDIUM AND ARSINE .1. GROWTH CHARACTERIZATION
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1974,
121
(12)
: 1642
-
1646
[3]
GROWTH AND PROPERTIES OF HETEROEPITAXIAL GALNAS ALLOYS ON GAAS SUBSTRATES USING TRIMETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(05)
: 683
-
687
[4]
CHEMISTRY AND TRANSPORT PHENOMENA OF CHEMICAL VAPOR-DEPOSITION OF SILICON FROM SICL4
BAN, VS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
BAN, VS
GILBERT, SL
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
GILBERT, SL
[J].
JOURNAL OF CRYSTAL GROWTH,
1975,
31
(DEC)
: 284
-
289
[5]
CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .1. DEPOSITION FROM SICL2H2 AND ETCHING BY HCL
BAN, VS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
BAN, VS
GILBERT, SL
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
GILBERT, SL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(10)
: 1382
-
1388
[6]
CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .2. DEPOSITION FROM SICL3H AND SICL4
BAN, VS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
BAN, VS
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(10)
: 1389
-
1391
[7]
MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1)
BAN, VS
论文数:
0
引用数:
0
h-index:
0
BAN, VS
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(09)
: 1473
-
&
[8]
TRANSPORT PHENOMENA MEASUREMENTS IN EPITAXIAL REACTORS
BAN, VS
论文数:
0
引用数:
0
h-index:
0
BAN, VS
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(02)
: 317
-
320
[9]
BAN VS, 4TH INT C VAP GROWTH
[10]
BAN VS, 1976, OCT M EL SOC LAS VEG
←
1
2
3
→