Shaped electrode and lens for a uniform radio-frequency capacitive plasma

被引:81
作者
Sansonnens, L [1 ]
Schmitt, J
机构
[1] Ecole Polytech Fed Lausanne, Ctr Rech Phys Plasmas, PPB Ecublens, CH-1015 Lausanne, Switzerland
[2] UNAXIS Displays, F-91120 Palaiseau, France
关键词
D O I
10.1063/1.1534918
中图分类号
O59 [应用物理学];
学科分类号
摘要
Plasma inhomogeneity caused by standing-wave effects in rf parallel plate reactors can be removed if one of the electrodes is replaced by a shaped electrode. The proposed shape is calculated using Maxwell's equations in vacuum. In this solution, the electric field has a radially uniform vertical component, and a radial component which remains negligible for a plasma gap small compared to the quarter wavelength. Perturbations to this vacuum solution in presence of a plasma should remain small if the damping length due to dissipation in the plasma is large compared to the reactor radius and if the rf skin depth remains large compared to the plasma thickness. (C) 2003 American Institute of Physics.
引用
收藏
页码:182 / 184
页数:3
相关论文
共 11 条
[1]  
[Anonymous], MAT RES SOC S P
[2]   Influence of the reactor design in the case of silicon nitride PECVD [J].
Caquineau, H ;
Despax, B .
CHEMICAL ENGINEERING SCIENCE, 1997, 52 (17) :2901-2914
[3]   INFLUENCE OF PLASMA EXCITATION-FREQUENCY FOR ALPHA-SI-H THIN-FILM DEPOSITION [J].
CURTINS, H ;
WYRSCH, N ;
FAVRE, M ;
SHAH, AV .
PLASMA CHEMISTRY AND PLASMA PROCESSING, 1987, 7 (03) :267-273
[4]   Effects of frequency on the two-dimensional structure of capacitively coupled plasma in Ar [J].
Kitajima, T ;
Takeo, Y ;
Nakano, N ;
Makabe, T .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (11) :5928-5936
[6]   Deposition-rate reduction through improper substrate-to-electrode attachment in very-high-frequency deposition of a-Si:H [J].
Meiling, H ;
vanSark, WGJHM ;
Bezemer, J ;
vanderWeg, WF .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (06) :3546-3551
[7]   A voltage uniformity study in large-area reactors for RF plasma deposition [J].
Sansonnens, L ;
Pletzer, A ;
Magni, D ;
Howling, AA ;
Hollenstein, C ;
Schmitt, JPM .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 1997, 6 (02) :170-178
[8]  
SANSONNENS L, 1995, P 13 EC PHOT SOL EN, P319
[9]   Glow discharge processing in the liquid crystal display industry [J].
Schmitt, J ;
Elyaakoubi, M ;
Sansonnens, L .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 2002, 11 (3A) :A206-A210
[10]   High rate deposition of a-Si:H and a-SiNx:H by VHF PECVD [J].
Takagi, T ;
Takechi, K ;
Nakagawa, Y ;
Watabe, Y ;
Nishida, S .
VACUUM, 1998, 51 (04) :751-755